http://www.ivypub.org/journal/RSS.aspx?J=DES&lang=cnen-US2025-06<p class="abstract">Hydrogen Embrittlement Behavior and Mitigation Strategies in Metallic Materials</p><ul><li>Pages 1-8</li><li>Author Jiao Lu</li><li>Abstract Hydrogen embrittlement (HE) remains a critical challenge in the reliability and safety of metallic components across a range of engineering applications, from aerospace to energy infrastructure. This review comprehensively explores the fundamental mechanisms underlying HE—including hydrogen-enhanced decohesion (HEDE), hydrogen-enhanced localized plasticity (HELP), and hydride-induced embrittlement—across various metal systems. Emphasis is placed on advanced characterization techniques such as thermal desorption spectroscopy, atom probe tomography, and in-situ mechanical testing, which provide multi-scale insights into hydrogen transport, trapping, and damage evolution. The study further evaluates key factors influencing HE susceptibility, including alloy composition, microstructural features, environmental conditions, and applied stress states. Mitigation strategies are systematically discussed, focusing on alloy design, microstructural engineering, surface treatments, and thermal processing. By integrating mechanistic understanding with practical prevention methods, this work provides a comprehensive framework for the design and maintenance of hydrogen-tolerant metallic materials in modern engineering systems.</li></ul>/DES/paperinfo/62488.shtmlDevelopment of Energy Science/DES/paperinfo/62488.shtml2025-06<p class="abstract">Application of High-Efficiency Wide-Bandgap Semiconductor Devices in Power Electronics</p><ul><li>Pages 9-15</li><li>Author Rui Lu</li><li>Abstract Wide-bandgap (WBG) semiconductor devices based on silicon carbide (SiC) and gallium nitride (GaN) have emerged as transformative technologies in power electronics, offering significant advantages over traditional silicon devices in terms of efficiency, power density, and thermal performance. This paper provides a comprehensive review of the fundamental material properties, fabrication processes, and key device architectures underpinning WBG technology. We analyze the application of SiC and GaN devices across a range of power electronic systems including inverters, DC-DC converters, motor drives, and grid equipment, highlighting their impact on system efficiency and size reduction. Performance optimization techniques, thermal management strategies, and reliability challenges are discussed in depth to provide insight into current technological limitations and future directions. Furthermore, we explore advanced drive circuits, control algorithms, and system integration methodologies tailored to exploit the fast switching capabilities of WBG devices while ensuring electromagnetic compatibility. This work aims to elucidate the critical role of WBG semiconductors in enabling the next generation of high-efficiency, compact, and robust power electronic systems, thereby facilitating broader adoption in emerging applications such as electric vehicles, renewable energy, and smart grids.</li></ul>/DES/paperinfo/62489.shtmlDevelopment of Energy Science/DES/paperinfo/62489.shtml