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The Optimization of the InGaAs/InP Material for Photodetectors

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Author: Ying Tian, Jun Deng, Linjie He, Yujie Du, Xiaochen Niu, Wei Xia

Abstract: Room-temperature photoluminescence was used to study the influence of growth temperature on InP/InGaAs quantum well grown on InP substrate by method of metal-organic chemical vapor deposition(MOCVD).The growth temperature of InGaAs andInP was studied and analyzed in two experiments ,and the best growth temperature of InGaAs and InP was found to be 650℃and 600℃respectively. Preparation the material of In0.53Ga0.47As/InP PIN detector using the optimized conditions, the dark current of the detector is obtained by optimizing before is 2 orders of magnitude less.

Keywords: InP/InGaAs Quantum Well; Infrared Detector; PL Spectrum


[1] GUO Hui, PENG Cha-xia, JIAO Gang-cheng, HUANG Jian-min. Shortwave-infrared-extended image intensifier technology and its application 2014, 35(3): 478-483

[2] T S M Arshad M A Othman N Y M Yasin et al. Comparison on IV Characteristics Analysis between Silicon and InGaAs PIN Photodiode[J]. IEEE 2013 3rd International Conference on Instrumentation, Communications, Information Technology, and Biomedical Engineering (ICICI-BME) 75 Bandung, November 7-8, 2013

[3] Williams G M Compton M Ramirez D A Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise[J]. IEEE 2013, Vol. 1, No. 2: 54-65

[4] M R Ravi Amitava DasGupta Nandita DasGupta Silicon nitride and polyimide capping layers on InGaAs/InP PIN photodetector after sulfur treatment[J]. Journal of Crystal Growth, 2004, 268: 359-363

[5] G. Salviati C. Ferrari L. Lazzarini et al. Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress[J]. Applied Surface Science, 2002, 188: 36-48

[6] Kamei H Hayashi H .OMVPE growth of GaInAs/InP and GaInAs/GaInAsP quantum wells[J]. Journal of Crystal Growth, 1991, 107: 567-572

[7] Yong Huang Jae-HyunRyou RussellD.Dupuis et al. Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition[J]. Journal of Crystal Growth, 2011, 316: 75-80

[8] Masanori Shinohara Naohisa Inoue Behavior and mechanism of step bunching during metalorganic vapor phase epitaxy of GaAs[J]. Appl Phys Lett, 1995, 66: 1936-1938

[9] Dong J R Chua S J WangY J et al. Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD[J]. Journal of Crystal Growth, 2004, 269: 408-412

[10] Zorn M TrepkT Schenk T et al. AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices[J]. Journal of Crystal Growth, 2007, 298: 23-27

[11] Bass S J Barnett S J Brown G T et al. Effect of growth temperature on the optical, electrical and crystallographic properties of epitaxial indium gallium arsenide grown by MOCVD in an atmospheric pressure reactor[J]. Journal of Crystal Growth, 1986, 79: 378-385

[12] Harunaka Yamaguchi Takashi Nagira Zempei Kawazu et al. Stable growth of ruthenium doped InP at the current blocking layer for buried-heterostructure lasers[J]. Journal of Crystal Growth, 2014

[13] Yong Huang Jae-Hyun Ryou Russell D Dupuis et al. InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer[J]. Journal of Applied Physics, 2011, 109, 063106

[14] Fry K L Kuo C P Cohen R M et al. Photoluminescence of organometallic vapor phase epitaxial GaInAs[J]. Appl Phys Lett, 1985, 46: 955-957

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