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Study of Etching for Mesa-isolated InP/InGaAs Avalanche Photo Diode

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Author: Wei Xia, Jun Deng, Tong Mou, Yujie Du

Abstract: The difference of the side wall and surface morphology about mesa-isolated InP/InGaAs avalanche photodiodes (APD), which were manufactured by ICP etching and wet etching respectively, was compared. And the influence of the dark current and breakdown voltage between ICP etching and wet etching was compared too. Under the conditions of Cl2/Ar2/CH4, the surface of InP with inductively coupled plasma (ICP) etching turned to be rough, and the cause of this formation was investigated. This paper mainly improved the surface morphology by optimizing the ICP etching time and power, which raised the temperature of the etched surface to ensure the stability of the etching and confirmed the stable conditions to manufacture In/InGaAs APD. And the mesa-isolated APD with good performance was finally manufactured.

Keywords: APD; InP/InGaAs; ICP; Mesa-isolated; dark current

References:

[1] Jiang X, Itzler M A, Ben-Michael R, et al. InGaAsP–InP Avalanche Photodiodes for Single Photon Detection[J]. Selected Topics in Quantum Electronics IEEE Journal of, 2007, 13(4):895-905.

[2] Ma C L F, Deen M J, Tarof L E. Device parameters extraction in separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes[J]. Electron Devices IEEE Transactions on, 1995, 42(12):2070-2079.

[3] Ferraro M S, Clark W R, Rabinovich W S, et al. InAlAs/InGaAs avalanche photodiode arrays for free space optical communication[J]. Applied Optics, 2015, 54.

[4] Kleinow P, Rutz F, Aidam R, et al. Experimental investigation of the charge-layer doping level in InGaAs/InAlAs avalanche photodiodes[J]. Infrared Physics & Technology, 2015, 71:298-302.

[5] Beck J D, Kinch M, Sun X. Update on linear mode photon counting with the HgCdTe linear mode avalanche photodiode[J]. Optical Engineering, 2014, 53(8):081906-081906.

[6] Kang Y, Mages P, Pauchard A, et al. Dark current reduction in fused InGaAs/Si avalanche photodiode[C]// Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE. IEEE, 2001:772 - 773.

[7] Hao Guoqiang. Study on Physics and devices of InGaAs Infrared detectors[D]. Chinese Academy of Sciences (Shanghai Institute of Microsystems and Information Technolog),2006.

[8] Klem J F, Kim J K, Cich M J, et al. Mesa-isolated InGaAs photodetectors with low dark current[J]. Applied Physics Letters, 2009, 95(3):031112-031112-3.

[9] Ma Lina, Guo Xia,Shen Guangdi. Research Progress in Etching of Group-Ⅲ Nitride Material[J]. Semiconductor Optoelectronics, 2005, 26(4):274-279.

[10] Zhou Xun,Tian Kun, Zhao Wenbo,et al. Effects of ICP Pressure on the Surface Damages of Etched AlGaN[J]. Semiconductor Optoelectronics, 2013(01).

[11] Yang Jianrong. Physics and Technology of HgCdTe Materials [M]. National Defence Industry Press, 2012.

[12] Forrest S R, Leheny R F, Nahory R E, et al. In0.53Ga0.47As photodiodes with dark current limited by generation‐recombination and tunneling[J]. Applied Physics Letters, 1980, 37(3):322-325.

[13] Pearton S J, Chakrabarti U K, Hobson W S, et al. Cl2 and SiCl4 Reactive Ion Etching of In‐Based III–V Semiconductors[J]. Journal of the Electrochemical Society, 1990, 137(10):3188-3202.

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