Paper Infomation
Application of High-Efficiency Wide-Bandgap Semiconductor Devices in Power Electronics
Full Text(PDF, 57KB)
Author: Rui Luo
Abstract: Wide-bandgap (WBG) semiconductor devices based on silicon carbide (SiC) and gallium nitride (GaN) have emerged as transformative technologies in power electronics, offering significant advantages over traditional silicon devices in terms of efficiency, power density, and thermal performance. This paper provides a comprehensive review of the fundamental material properties, fabrication processes, and key device architectures underpinning WBG technology. We analyze the application of SiC and GaN devices across a range of power electronic systems including inverters, DC-DC converters, motor drives, and grid equipment, highlighting their impact on system efficiency and size reduction. Performance optimization techniques, thermal management strategies, and reliability challenges are discussed in depth to provide insight into current technological limitations and future directions. Furthermore, we explore advanced drive circuits, control algorithms, and system integration methodologies tailored to exploit the fast switching capabilities of WBG devices while ensuring electromagnetic compatibility. This work aims to elucidate the critical role of WBG semiconductors in enabling the next generation of high-efficiency, compact, and robust power electronic systems, thereby facilitating broader adoption in emerging applications such as electric vehicles, renewable energy, and smart grids.
Keywords: Wide-Bandgap Semiconductors; Silicon Carbide; Gallium Nitride; Power Electronics; High-Efficiency Devices; Thermal Management
References:
[1] Aslan S, Ozturk M, Altintas N. A Comparative Evaluation of Wide-Bandgap Semiconductors for High-Performance Domestic Induction Heating[J]. Energies,2023,16(10):
[2] Saadeh O, Al-Hmoud A, Dalala Z. Characterization Circuit, Gate Driver and Fixture for Wide-Bandgap Power Semiconductor Device Testing[J]. Electronics,2020,9(5):
[3] Electronics; Research on Electronics Discussed by Researchers at German Jordanian University (Characterization Circuit, Gate Driver and Fixture for Wide-Bandgap Power Semiconductor Device Testing)[J]. Electronics Newsweekly,2020,
[4] Yuke C, W. J P, J. M U, et al.Electric field mapping of wide-bandgap semiconductor devices at a submicrometre resolution[J]. Nature Electronics,2021,4(7):478-485.
[5] 237th ECS Meeting: Wide-Bandgap Semiconductor Materials and Devices 21[J]. ECS Transactions,2020,97(4):
[6] Technavio Releases Report on the Global Wide-Bandgap (WBG) Power Semiconductor Devices Market[J]. Manufacturing Close - Up,2019,
[7] Boyi Z, Shuo W. A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices[J]. IEEE Journal of Emerging and Selected Topics in Power Electronics,2020,8(1):626-643.
[8] Yuan Q, Benjamin A, Joseph S, et al. Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective[J]. Journal of Physics D: Applied Physics,2023,56(9):